mesterværk modul lammelse si sio2 wafer Awakening kunstner Spectacle
MTI KOREA - Thermal Oxide Wafer: 500 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N-type ,P doped 1sp ,0.01-0.1 ohm.cm (부가세 별도)MTIKorea
Si/SiO2 Wafer
Preparation and Structural Investigation of Ultra-Uniform Mo Films on a Si/SiO2 Wafer by the Direct-Current Magnetron Sputtering Method | Crystal Growth & Design
Thermal Oxide Wafer, 30 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type, As-doped, 1 side polished, R:<0.005 ohm.cm